Shallow donor and DX states of Si in AlN

dc.contributor.authorSon, N. T.
dc.contributor.authorBickermann, Matthias
dc.contributor.authorJanzén, Erik
dc.date.accessioned2012-11-05
dc.date.available2023-10-15T20:07:08Z
dc.date.created2011
dc.date.issued2012-11-05
dc.description.abstractIn unintentionally Si-doped AlN, the electron paramagnetic resonance (EPR) spectrum of the Si shallow donor (g = 1.9905) was observed in darkness at room temperature. The temperature dependence of the EPR signal suggests that Si in AlN is a DX center with the DX− state lying at ∼ 78 meV below the neutral shallow donor state. With such relatively small thermal activation energy, Si is expected to behave as a shallow dopant in AlN at normal device operating temperatures.en
dc.identifier.citationApplied Physics Letters 98.9 (2011): 05.11.2012 <http://apl.aip.org/resource/1/applab/v98/i9/p092104_s1>
dc.identifier.opus-id2566
dc.identifier.urihttps://open.fau.de/handle/openfau/2566
dc.identifier.urnurn:nbn:de:bvb:29-opus-37470
dc.language.isoen
dc.subjectaluminium compounds
dc.subjectIII-V semiconductors
dc.subjectimpurity states
dc.subjectparamagnetic resonance
dc.subjectsilicon
dc.subject.ddcDDC Classification::5 Naturwissenschaften und Mathematik :: 53 Physik :: 530 Physik
dc.titleShallow donor and DX states of Si in AlNen
dc.typearticle
dcterms.publisherFriedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
local.journal.titleApplied Physics Letters 98.9 (2011): 05.11.2012 <http://apl.aip.org/resource/1/applab/v98/i9/p092104_s1>
local.sendToDnbfree*
local.subject.fakultaetNaturwissenschaftliche Fakultät / Naturwissenschaftliche Fakultät -ohne weitere Spezifikation-
local.subject.gnd-
local.subject.sammlungUniversität Erlangen-Nürnberg / Allianzlizenzen: Alle Beiträge sind mit Zustimmung der Rechteinhaber aufgrund einer DFG-geförderten Allianzlizenz frei zugänglich. / Allianzlizenzen 2011
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