Shallow donor and DX states of Si in AlN

Language
en
Document Type
Article
Issue Date
2012-11-05
Issue Year
2011
Authors
Son, N. T.
Bickermann, Matthias
Janzén, Erik
Editor
Abstract

In unintentionally Si-doped AlN, the electron paramagnetic resonance (EPR) spectrum of the Si shallow donor (g = 1.9905) was observed in darkness at room temperature. The temperature dependence of the EPR signal suggests that Si in AlN is a DX center with the DX− state lying at ∼ 78 meV below the neutral shallow donor state. With such relatively small thermal activation energy, Si is expected to behave as a shallow dopant in AlN at normal device operating temperatures.

Journal Title
Applied Physics Letters 98.9 (2011): 05.11.2012 <http://apl.aip.org/resource/1/applab/v98/i9/p092104_s1>
Citation
Applied Physics Letters 98.9 (2011): 05.11.2012 <http://apl.aip.org/resource/1/applab/v98/i9/p092104_s1>
DOI
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