Lanthanoid Implantation for Effective Work Function Control in NMOS High‐κ∕Metal Gate Stacks

dc.contributor.authorFet, Azinwi
dc.contributor.authorHäublein, V.
dc.contributor.authorBauer, A. J.
dc.contributor.authorRyssel, H.
dc.contributor.authorFrey, L.
dc.date.accessioned2012-11-05
dc.date.available2023-10-16T13:53:42Z
dc.date.created2011
dc.date.issued2012-11-05
dc.description.abstractEffective work function instability of high‐κ∕metal gate MOS stacks after high temperature treatment results in device threshold voltage shifts and is one of the problems associated with the gate‐first integration of high‐κ dielectrics in the CMOS process flow. The exact reason for this instability is subject of intense debate. In this paper it is shown that a positive threshold voltage shift due to thermal treatment can be compensated by implanting the lanthanoids lanthanum or dysprosium into the high‐κ stack.en
dc.identifier.citationAIP Conference Proceedings 1321 (2011): S. 237-240. 05.11.2012 <http://proceedings.aip.org/resource/2/apcpcs/1321/1/237_1>
dc.identifier.opus-id2559
dc.identifier.urihttps://open.fau.de/handle/openfau/2559
dc.identifier.urnurn:nbn:de:bvb:29-opus-37402
dc.language.isoen
dc.subjection implantation
dc.subjectvoltage measurement
dc.subjectannealing
dc.subjectdoping profiles
dc.subject.ddcDDC Classification::6 Technik, Medizin, angewandte Wissenschaften :: 60 Technik :: 600 Technik, Technologie
dc.titleLanthanoid Implantation for Effective Work Function Control in NMOS High‐κ∕Metal Gate Stacksen
dc.typearticle
dcterms.publisherFriedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
local.journal.titleAIP Conference Proceedings 1321 (2011): S. 237-240. 05.11.2012 <http://proceedings.aip.org/resource/2/apcpcs/1321/1/237_1>
local.sendToDnbfree*
local.subject.fakultaetTechnische Fakultät / Technische Fakultät -ohne weitere Spezifikation-
local.subject.gnd-
local.subject.sammlungUniversität Erlangen-Nürnberg / Allianzlizenzen: Alle Beiträge sind mit Zustimmung der Rechteinhaber aufgrund einer DFG-geförderten Allianzlizenz frei zugänglich. / Allianzlizenzen 2011
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