Driving forces for the self-assembly of graphene oxide on organic monolayers

Language
en
Document Type
Article
Issue Date
2016-10-04
Issue Year
2014
Authors
Kirschner, Johannes
Wang, Zhenxing
Eigler, Siegfried
Steinrück, Hans-Peter
Jäger, Christof M.
Clark, Timothy
Hirsch, Andreas
Halik, Marcus
Editor
Abstract

Graphene oxide (GO) flakes were self-assembled from solution on surfaces of self-assembled monolayers (SAMs), varying in the chemical structure of their head groups. The coverage density of GO relates to strength of attractive interaction, which is largest for Coulomb interaction provided by positively charged SAM head groups and negatively charged GO. A rough surface enhances the coverage density but with the same trend in driving force dependency. The self-assembly approach was used to fabricate field-effect transistors with reduced GO (rGO) as active layer. The SAMs as attractive layer for self-assembly remain almost unaffected by the reduction from GO to rGO and serve as ultra-thin gate dielectrics in devices, which operate at low voltages of maximum 3 V and exhibit a shift of the Dirac voltage related to the dipole moment of the SAMs.

Journal Title
Nanoscale
Volume
6
Issue
19
Citation
Zugehörige ORCIDs